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AM29BDS64HD9VFI 参数 Datasheet PDF下载

AM29BDS64HD9VFI图片预览
型号: AM29BDS64HD9VFI
PDF下载: 下载PDF文件 查看货源
内容描述: 128或64兆比特( 8 M或4米×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 89 页 / 1587 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
AC CHARACTERISTICS  
Erase/Program Operations  
Parameter  
JEDEC Standard Description  
75 MHz  
66 MHz  
54 MHz  
Unit  
tAVAV  
tWC  
Write Cycle Time (Note 1)  
Min  
Min  
45  
50  
55  
5
ns  
Address Setup  
Time (Notes 2,  
3)  
Synchronous  
Asynchronous  
4
tAVWL  
tAS  
ns  
ns  
0
6
Address Hold  
Time (Notes 2,  
3)  
Synchronous  
Asynchronous  
5.5  
15  
7
tWLAX  
tAH  
Min  
20  
20  
tAVDP  
tDS  
AVD# Low Time  
Data Setup Time  
Data Hold Time  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
10  
20  
12  
45  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tDVWH  
tWHDX  
tGHWL  
tDH  
0
0
0
0
tGHWL  
tCAS  
tCH  
Read Recovery Time Before Write  
CE# Setup Time to AVD#  
CE# Hold Time  
tWHEH  
tWLWH  
tWHWL  
tWP  
Write Pulse Width  
20  
30  
20  
tWPH  
tSR/W  
tVID  
Write Pulse Width High  
15  
20  
0
Latency Between Read and Write Operations Min  
VACC Rise and Fall Time  
Min  
Min  
500  
VACC Setup Time (During Accelerated  
Programming)  
tVIDS  
1
µs  
tVCS  
tCS  
VCC Setup Time  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Max  
Max  
Typ  
50  
0
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
µs  
tELWL  
CE# Setup Time to WE#  
tAVSW  
tAVHW  
tACS  
tACH  
tAVHC  
tCSW  
tSEA  
AVD# Setup Time to WE#  
AVD# Hold Time to WE#  
4
4
4
5
5
5
7
5
Address Setup Time to CLK (Notes 2, 3)  
Address Hold Time to CLK (Notes 2, 3)  
AVD# Hold Time to CLK  
5.5  
6
4
Clock Setup Time to WE#  
Sector Erase Accept Timeout  
Erase Suspend Latency  
5
50  
tESL  
35  
tASP  
Toggle Time During Sector Protection  
100  
Toggle Time During Programming within a  
Protected Sector  
tPSP  
Typ  
1
µs  
Notes:  
1. Not 100% tested.  
program operation timing, addresses are latched on the first of either  
the falling edge of WE# or the active edge of CLK.  
2. Asynchronous mode allows both Asynchronous and Synchronous  
program operation. Synchronous mode allows both Asynchronous  
and Synchronous program operation.  
4. See the “Erase and Programming Performance” section for more  
information.  
3. In asynchronous program operation timing, addresses are latched  
on the falling edge of WE# or rising edge of AVD#. In synchronous  
5. Does not include the preprogramming time.  
May 10, 2006 27024B3  
Am29BDS128H/Am29BDS640H  
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