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AM29BDS064HE9VMI 参数 Datasheet PDF下载

AM29BDS064HE9VMI图片预览
型号: AM29BDS064HE9VMI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 85 页 / 2642 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y I n f o r m a t i o n  
eration is suspended, any previously latched internal  
data and the current state are retained.  
The presence of the reduced wait-state handshaking  
feature may be verified by writing the autoselect com-  
mand sequence to the device. See “Autoselect  
Command Sequence” for details.  
Burst Suspend requires CE# to be asserted, WE# de-  
asserted, and the initial address latched by AVD# or  
the CLK edge. Burst Suspend occurs when OE# is de-  
asserted. See Figure 21, “Reduced Wait-state Hand-  
shake Burst Suspend/Resume at an even address,on  
page 60, Figure 22, “Reduced Wait-state Handshake  
Burst Suspend/Resume at an odd address,on  
page 60, Figure 23, “Reduced Wait-state Handshake  
Burst Suspend/Resume at address 3Eh (or offset from  
3Eh),on page 61, Figure 24, “Reduced Wait-state  
Handshake Burst Suspend/Resume at address 3Fh (or  
offset from 3Fh by a multiple of 64),on page 61,  
Figure 25, “Standard Handshake Burst Suspend prior  
to Initial Access,on page 62, Figure 26, “Standard  
Handshake Burst Suspend at or after Initial Access,”  
on page 62, Figure 27, “Standard Handshake Burst  
Suspend at address 3Fh (starting address 3Dh or ear-  
lier),on page 63, Figure 28, “Standard Handshake  
Burst Suspend at address 3Eh/3Fh (without a valid  
Initial Access),on page 63, and Figure 29, “Standard  
Handshake Burst Suspend at address 3Eh/3Fh (with 1  
Access CLK),on page 64.  
For optimal burst mode performance on devices with-  
out the reduced wait-state handshaking option, the  
host system must set the appropriate number of wait  
states in the flash device depending on clock fre-  
quency and the presence of a boundary crossing. See  
“Set Configuration Register Command Sequence” sec-  
tion on page 34 section for more information. The  
device will automatically delay RDY and data by one  
additional clock cycle when the starting address is  
odd.  
The autoselect function allows the host system to de-  
termine whether the flash device is enabled for  
reduced wait-state handshaking. See the “Autoselect  
Command Sequence” section for more information.  
Simultaneous Read/Write Operations  
with Zero Latency  
This device is capable of reading data from one bank  
of memory while programming or erasing in another  
bank of memory. An erase operation may also be sus-  
pended to read from or program to another location  
within the same bank (except the sector being  
erased). Figure 49, “Back-to-Back Read/Write Cycle  
Timings,on page 82 shows how read and write cycles  
may be initiated for simultaneous operation with zero  
latency. Refer to the DC Characteristics table for read-  
while-program and read-while-erase current  
specifications.  
Burst plus Burst Suspend should not last longer than  
t
without re-latching an address or crossing an ad-  
RCC  
dress boundary. To resume the burst access, OE#  
must be re-asserted. The next active CLK edge will re-  
sume the burst sequence where it had been  
suspended. See Figure 30, “Read Cycle for Continu-  
ous Suspend,on page 64.  
The RDY pin is only controlled by CE#. RDY will remain  
active and is not placed into a high-impedance state  
when OE# is de-asserted.  
Writing Commands/Command  
Sequences  
Configuration Register  
The device has the capability of performing an asyn-  
chronous or synchronous write operation. While the  
device is configured in Asynchronous read it is able to  
perform Asynchronous write operations only. CLK is  
ignored in the Asynchronous programming mode.  
When in the Synchronous read mode configuration,  
the device is able to perform both Asynchronous and  
Synchronous write operations. CLK and WE# address  
latch is supported in the Synchronous programming  
mode. During a synchronous write operation, to write  
a command or command sequence (which includes  
programming data to the device and erasing sectors  
of memory), the system must drive AVD# and CE# to  
V , and OE# to V when providing an address to the  
The device uses a configuration register to set the var-  
ious burst parameters: number of wait states, burst  
read mode, active clock edge, RDY configuration, and  
synchronous mode active.  
Reduced Wait-state Handshaking Option  
The device can be equipped with a reduced wait-state  
handshaking feature that allows the host system to  
simply monitor the RDY signal from the device to de-  
termine when the initial word of burst data is ready to  
be read. The host system should use the programma-  
ble wait state configuration to set the number of wait  
states for optimal burst mode operation. The initial  
word of burst data is indicated by the rising edge of  
RDY after OE# goes low.  
IL  
IH  
device, and drive WE# and CE# to V , and OE# to V  
IL  
IH  
when writing commands or data. During an asynchro-  
nous write operation, the system must drive CE# and  
12  
Am29BDS128H/Am29BDS064H  
27024_A5_00_E June 18, 2004