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AM29BDD160GB54DPBF 参数 Datasheet PDF下载

AM29BDD160GB54DPBF图片预览
型号: AM29BDD160GB54DPBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80]
分类和应用: 内存集成电路
文件页数/大小: 79 页 / 1482 K
品牌: SPANSION [ SPANSION ]
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AC CHARACTERISTICS  
Enter  
Embedded  
Erasing  
Erase  
Suspend  
Enter Erase  
Suspend Program  
Erase  
Resume  
Erase  
Erase Suspend  
Read  
Erase  
Suspend  
Program  
Erase  
Complete  
WE#  
Erase  
Erase Suspend  
Read  
DQ6  
DQ2  
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an  
erase-suspended sector.  
Figure 26. DQ2 vs. DQ6 for Erase and Erase Suspend Operations  
CE#  
CLK  
AVD#  
Addresses  
OE#  
VA  
VA  
tOE  
tOE  
Data  
Status Data  
Status Data  
RDY  
1. The timings are similar to synchronous read timings and asynchronous data polling Timings/Toggle bit Timing.  
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,  
the toggle bits will stop toggling.  
3. RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active one  
clock cycle before data.  
4. Data polling requires burst access time delay.  
Figure 27. Synchronous Data Polling Timing/Toggle Bit Timings  
68  
Am29BDD160G  
June 7, 2006  
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