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AM29BDD160GB54DKK 参数 Datasheet PDF下载

AM29BDD160GB54DKK图片预览
型号: AM29BDD160GB54DKK
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80]
分类和应用: 内存集成电路闪存
文件页数/大小: 79 页 / 1482 K
品牌: SPANSION [ SPANSION ]
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REVISION SUMMARY  
number of delay cycles callouts. Moved start of Valid  
Address cycle.  
Revision B (September 30, 2002)  
Initial public release.  
Falling CLK Edge Output and Two-CLK Data Hold  
Deleted figure.  
Revision B+1 (October 7, 2002)  
Distinctive Characteristics  
See Table 9 , Configuration Register Definitions  
Modified descriptions for CR3–CR10.  
Changed maximum power consumption on burst  
mode read, program/erase operations, and standby  
mode.  
See Table 16 , CFI Device Geometry Definition  
Burst Mode Read table  
Modified description of data at address 2Ch (x32  
mode); added data 0003h.  
Changed tCES specification from 7, 8, and 9 ns to 4, 5,  
and 6 ns, respectively.  
DC Characteristics  
DC Characteristics table  
Added maximum ICC6 specification.  
Deleted ICC2 specification. Changed ICCB OE# test  
condition from VIH to VIL. Added 1 MHz test condition  
to ICC1; changed OE# test condition from VIH to VIL.  
Changed ICC3 and ICC4 maximum values and added  
AC Characteristics  
Asynchronous Read Operations: Changed tCE specifi-  
cations for 54D, 65D, 64C, and 65A speed options.  
Changed tDF specifications for 65A and 90A speed op-  
tions.  
typical values. Changed maximum values for ICC5  
ICC7, and ICC8. Added Note 4 to table.  
,
AC Characteristics  
Revision B+4 (April 8, 2003)  
Erase and Program Operations table: Replaced TBDs  
for tAH and tWP with values.  
Distinctive Characteristics  
Corrected typo in Single power supply operation.  
Erase and Programming Performance table  
Corrected typo in Performance characteristics.  
Product Selector Guide  
Replaced TBDs and existing typical and maximum val-  
ues with new values.  
Updated Max Burst Access Delay for the 54D, 65D,  
64C, and 80C speed options.  
Revision B+2 (October 14, 2002)  
Distinctive Characteristics, DC Characteristics  
Changed VCC CMOS standby current to 30 mA max.  
Global  
Removed references to interleaving operations  
throughout datasheet.  
Absolute Maximum Ratings  
Changed maximum rating for VCC to 3.0 V.  
Table 6. 16-Bit and 32-Bit Linear and Interleaved  
Burst Data Order  
Revision B+3 (November 22, 2002)  
Removed 2nd row for “Four Interleaved Data Trans-  
fersand “Eight Interleaved Data Transfers.  
Product Selector Guide  
Added availability note. Changed minimum initial clock  
delay and maximum CE# access time on 54D, 65D,  
64C, and 65A speeds. Changed maximum OE# ac-  
cess time on 65A and 90A speeds.  
Continuous Burst Read Operations, Figure 3. and  
Figure 4. Wait Function During Continuous Burst  
Reads at Wordline Boundary, Figure 5. and Figure  
6. Odd/Even Starting address Continuous Burst  
Mode Alignment  
Ordering Information  
Added availability note.  
Removed from datasheet.  
Table 9. Configuration Register Definitions  
Added “Reserved” references to table.  
See Table 8 , Burst Initial Access Delay  
Deleted definitions and settings columns and added  
initial burst access columns.  
Sector Protection  
Figure 3, Initial Burst Delay Control  
Added Sector and Sector Group section.  
Modified drawing: Deleted arrows connecting ad-  
dress/data cycles. Deleted setting callouts. Changed  
June 7, 2006  
Am29BDD160G  
75  
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