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AM29BDD160GB80CKF 参数 Datasheet PDF下载

AM29BDD160GB80CKF图片预览
型号: AM29BDD160GB80CKF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX32, 80ns, PQFP80, PLASTIC, QFP-80]
分类和应用: 内存集成电路
文件页数/大小: 76 页 / 1251 K
品牌: SPANSION [ SPANSION ]
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ADVANCE INFORMATION
Am29BDD160G
16 Megabit (1 M x 16-bit/512 K x 32-Bit)
CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURE ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: 75%/25%
User-Defined x16 or x32 Data Bus
Dual Boot Block
— Top and bottom boot in the same device
Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
Manufactured on 0.17 µm process technology
SecSi (Secured Silicon) Sector (256 Bytes)
Factory locked and identifiable:
16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by AMD
Customer lockable:
Can be read, programmed or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
Linear Burst:
4 double words (x32), 8 words (x16)
and double words (x32), and 32 words (x16) with
wrap around
Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD Am29LV and Am29F
flash memories
PERFORMANCE CHARACTERISTICS
High performance read access
— Initial/random access times as fast as 54 ns
— Burst access time as fast as 9 ns for ball grid array
package
Ultra low power consumption
— Burst Mode Read: 90 mA @ 66 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 30 µA max
Minimum 1 million write cycles guaranteed per
sector
20 year data retention at 125°C
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
— 1.65 V to 2.75 V compatible I/O signals
SOFTWARE FEATURES
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V
CC
levels)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
HARDWARE FEATURES
Program Suspend/Resume & Erase
Suspend/Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/BY#),
and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
— 80-pin PQFP
— 80-ball Fortified BGA
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.DRAFT 4/17/03
Publication#
24960
Rev:
B
Amendment/+4
Issue Date:
April 8, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.