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3SK166 参数 Datasheet PDF下载

3SK166图片预览
型号: 3SK166
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓N沟道双栅场效应管MES [GaAs N-channel Dual Gate MES FET]
分类和应用:
文件页数/大小: 5 页 / 75 K
品牌: SONY [ SONY CORPORATION ]
 浏览型号3SK166的Datasheet PDF文件第1页浏览型号3SK166的Datasheet PDF文件第2页浏览型号3SK166的Datasheet PDF文件第4页浏览型号3SK166的Datasheet PDF文件第5页  
3SK166A  
ID vs. VG2S  
gm vs. VG1S  
100  
80  
60  
40  
20  
0
100  
80  
60  
50  
40  
20  
(VDS = 5V)  
(VDS = 5V)  
VG2S  
= 1.5V  
VG1S  
= 0V  
–0.2V  
–0.4V  
1.0V  
–0.6V  
–0.8V  
–1.0V  
0.5V  
0V  
–1.2V  
–1.4V  
–0.5V  
–1.0V  
–2.0  
–1.5  
–1.0  
–0.5  
0
–2.0  
–1.5  
–1.0  
–0.5  
0
VG2S – Gate 2 to source voltage [V]  
VG1S – Gate 1 to source voltage [V]  
NF vs. VG1S  
Ga vs. VG1S  
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
(VDS = 5V, f = 800MHz)  
(VDS = 5V, f = 800MHz)  
VG2S = 1.5V  
1.0V  
1.5V  
VG2S = 0.5V  
1.0V  
1.5V  
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9  
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9  
VG1S – Gate 1 to source voltage [V]  
VG1S – Gate 1 to source voltage [V]  
NF, Ga vs. ID  
NF, Ga vs. f  
3.0  
30  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
30  
(VDS = 5V, VG2S = 1.5V, f = 800MHz)  
(VDS = 5V, VG2S = 1.5V, ID = 10mA)  
2.5  
2.0  
1.5  
1.0  
0.5  
0
25  
20  
15  
10  
5
25  
20  
15  
10  
5
Ga  
Ga  
NF  
NFmin  
0
0
0
2
4
6
8
10 12 14 16 18 20 22  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
f – Frequency [GHz]  
ID – Drain current [mA]  
– 3 –