3SK166A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
VDS = 8V
Drain cut-off current
IDSX
VG1S = –4V
VG2S = 0V
100
–20
–20
80
µA
VG1S = –5V
VG2S = 0V
VDS = 0V
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
IG1SS
IG2SS
IDSS
µA
µA
mA
V
VG2S = –5V
VG1S = 0V
VDS = 0V
VDS = 5V
VG1S = 0V
VG2S = 0V
20
–1
–1
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
–4
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
–4
V
VDS = 5V
ID = 10mA
Forward transfer admittance
gm
25
40
ms
VG2S = 1.5V
f = 1kHz
VDS = 5V
Ciss
Input capacitance
Feedback capacitance
Noise figure
1.3
25
2.0
40
pF
fF
ID = 10mA
VG2S = 1.5V
f = 1MHz
Crss
VDS = 5V
NF
1.2
20
2.5
dB
dB
ID = 10mA
VG2S = 1.5V
f = 800MHz
Associated gain
IDSS classification
Ga
18
Product name classification
3SK166A-0
IDSS RANK
20 to 80mA
45 to 80mA
3SK166A-2
Typical Characteristics (Ta = 25°C)
ID vs. VDS
ID vs. VG1S
100
100
80
70
60
40
20
(VG2S = 1.5V)
(VDS = 5V)
VG2S
= 1.5V
VG1S
= 0V
1.0V
80
60
40
20
0
0.5V
–0.2V
–0.4V
–0.6V
0V
–0.5V
–1.5V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
0
2
4
6
8
–2.0
–1.5
–1.0
–0.5
0
VDS – Drain to source voltage [V]
VG1S – Gate 1 to source voltage [V]
– 2 –
SONY [ SONY CORPORATION ]
