點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL211
PAD DESCRIPTIONS
PAD NO.
PAD NAME
DESCRIPTIONS
1
2
3
4
IN
Input Pad(Active High )
Supply Voltage
VDD
OUT
VSS
Output Pad Sinking Current(Active Low)
Ground
DIE CONFIGURATION
(510, 549)
4.
VSS
1.
IN
Center (401.6, 449.85)
Center (195.8, 445.85)
2.
3.
OUT
VDD
Center (406.25, 102.2)
Center (102.15, 102.25)
Unit：um
(0, 0)
Die Size: 510um * 549um
Die Thickness: 12mil(=300um)
Pad Size: 100um * 100um
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
SP-DL211-A.005.doc
- 3 -
Version：A.005
SITI [ SILICON TOUCH TECHNOLOGY INC. ]
