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SGA-1163 参数 Datasheet PDF下载

SGA-1163图片预览
型号: SGA-1163
PDF下载: 下载PDF文件 查看货源
内容描述: DC -6000 MHz的硅锗HBT可级联增益模块 [DC-6000 MHz SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK]
分类和应用:
文件页数/大小: 7 页 / 321 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary  
SGA-1163  
Product Description  
DC-6000 MHz Silicon Germanium  
HBT Cascadeable Gain Block  
Sirenza Microdevices’SGA-1163 is a Silicon Germanium HBT  
Heterostructure Bipolar Transistor (SiGe HBT) amplifier that  
offers excellent isolation and flat gain response for applica-  
tions to 6 GHzꢀ  
This RFIC is a 2-stage design that provides high isolation of  
up to 40dB at 2 GHz and is fabricated using the latest SiGe  
HBT 50 GHz FT process, featuring 1 micron emitters with  
Vceo > 7Vꢀ  
Product Features  
• DC-6000 MHz Operation  
• Excellent Isolation, >50 dB at 900 MHz  
• Single Supply Voltage  
These unconditionally stable amplifiers have less than 1dB  
gain drift over 125ºC operating range (-40C to +85C) and  
are ideal for use as buffer amplifiers in oscillator applica-  
tions covering cellular, ISM and narrowband PCS bandsꢀ  
• Unconditionally Stable  
• 50 Ohms In/Out, Broadband Match for Operation  
from DC - 6 GHz  
Isolation vsꢀ Frequency  
0
-20  
dB  
-40  
-60  
-80  
Applications  
• Buffer Amplifier for Oscillator Applications  
• Broadband, High Isolation  
Frequency MHz  
Parameters: Test Conditions:  
Z0 = 50 Ohms, Id = 12 mA, T = 25ºC  
Symbol  
Units  
Min  
Typ  
Max  
f = 850 MHz  
f = 1950 MHz  
dBm  
dBm  
-3ꢀ3  
-4ꢀ6  
Output Power at 1dB Compression  
Small Signal Gain  
P1dB  
f = DC - 1000 MHz  
f = 1000 - 2000 MHz  
f = 2000 - 6000 MHz  
dB  
dB  
dB  
10ꢀ5  
11ꢀ7  
11ꢀ2  
9ꢀ5  
S21  
f = DC - 1000 MHz  
f = 1000 - 2000 MHz  
f = 2000 - 6000 MHz  
dB  
dB  
dB  
53ꢀ3  
38ꢀ3  
28ꢀ5  
Reverse Isolation  
S12  
f = DC - 2400 MHz  
f = 2400 - 6000 MHz  
1ꢀ3:1  
1ꢀ8:1  
Input VSWR  
-
-
S11  
S22  
IP3  
NF  
f = DC - 2400 MHz  
f = 2400 - 6000 MHz  
2ꢀ1:1  
2ꢀ2:1  
Output VSWR  
Third Order Intercept Point  
Power out per Tone = -20 dBm  
f = 850 MHz  
f = 1950 MHz  
dBm  
dBm  
7ꢀ9  
6ꢀ3  
f = DC - 1000 MHz  
f = 1000 - 2400 MHz  
dB  
dB  
3ꢀ1  
3ꢀ4  
Noise Figure  
Group Delay  
f = 1000 MHz  
pS  
V
118  
4ꢀ6  
12  
TD  
VD  
ID  
Device Operating Voltage  
Device Operating Current  
4ꢀ2  
10  
5ꢀ0  
14  
mA  
The information provided herein is believed to be reliable at press timeꢀ Sirenza Microdevices assumes no responsibility for inaccuracies or omissionsꢀ Sirenza Microdevices assumes no responsibility for the use of  
this information, and all such information shall be entirely at the user’s own riskꢀ Prices and specifications are subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are  
implied or granted to any third partyꢀ Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systemsꢀ Copyright 2001 Sirenza Microdevices, Incꢀꢀ  
All worldwide rights reservedꢀ  
522 Almanor Aveꢀ, Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
http://wwwꢀsirenzaꢀcom  
EDS-100934 Rev B