SDD60
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3 x SDD60
Fig. 6 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.59
0.61
0.63
0.66
0.70
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.012
0.045
0.533
t
i
(s)
0.0012
0.095
0.455
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.79
0.81
0.83
0.86
0.90
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.012
0.045
0.533
0.2
t
i
(s)
0.0012
0.095
0.455
0.495
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
