SDD60
Diode-Diode Modules
Symbol
I
R
V
F
V
TO
r
T
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
per diode; DC current
per module
per diode; DC current
per module
T
VJ
=T
VJM
; V
R
=V
RRM
I
F
=200A; T
VJ
=25
o
C
Test Conditions
Characteristic Values
10
1.60
0.8
4.3
90
11
0.59
0.295
0.79
0.395
12.7
9.6
50
Unit
mA
V
V
m
uC
A
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
=T
VJM
T
VJ
=125
o
C; I
F
=50A; -di/dt=0.64A/us
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
