S1PHB36
Single Phase Half Controlled Bridge With Free Wheeling Diode
70
A
300
A
103
A2s
50Hz, 80% VR R M
VR = 0 V
60
250
IFS M
typ.
I2t
IF
TVJ = 45°C
50
40
30
20
10
0
TVJ = 45°C
200
150
100
50
max.
TVJ = 125°C
TVJ 25°C
TVJ = 125°C
=
102
TVJ = 125°C
0
101
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
1
1
2
3
4
5
6 7 10
ms
s
V
VF
t
t
Fig. 3 Forward current versus voltage
drop per diode
Fig. 4 S urge overload current
Fig. 5 I2t versus time per diode
120
W
50
A
R thHA
:
100
Ptot
40
Id(AV)M
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
80
60
40
20
0
30
20
10
0
0
10
20
30
40
IF(AV)M
A
0
20 40 60 80 100 120 °1C40
Tamb
0
20 40 60 80 100 120 °C
TH
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Max. forward current versus
heatsink temperature
2.0
K/W
1.5
ZthJH
1.0
0.5
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
0.005
0.2
0.875
0.47
0.008
0.05
0.06
0.25
2
3
4
0.001
0.01
0.1
1
s
10
t
Fig. 8 Transient thermal impedance junction to heatsink
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
