S1PHB36
Single Phase Half Controlled Bridge With Free Wheeling Diode
Symbol
Test Conditions
Characteristic Values
Unit
5
0.3
TVJ=TVJM; VR=VRRM; VD=VDRM
mA
IR, ID
TVJ=25oC
IT, IF=45A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
1.45
0.85
13
V
V
VT, VF
VTO
rT
m
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
TVJ=125oC
1.0
1.2
V
VGT
65
80
50
IGT
mA
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
0.2
5
V
VGD
IGD
VD=2/3VDRM
mA
TVJ=25oC
TVJ=-40oC
TVJ=125oC
150
200
100
tG=30us; IG=0.3A;
diG/dt=0.3A/us
IL
mA
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
100
2
mA
us
IH
tgd
TVJ=125oC; IT=15A; tp=300us; VR=100V
typ.
tq
150
75
us
VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us
uC
Qr
per thyristor(diode); DC current
per module
1.15
0.29
K/W
K/W
RthJC
RthJK
per thyristor(diode); DC current
per module
1.55
0.39
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
10
12.6
6.3
50
mm
mm
m/s2
dS
dA
a
1000
s
TVJ
= 25°C
1: I
GT, TVJ = 125°C
A
2: IGT, TVJ
3: IGT, TVJ
=
=
25°C
V
-40°C
VG
tgd
typ.
Limit
100
10
1
3
2
1
6
1
5
4
4: P
GAV = 0.5 W
5: PGM
6: PGM
=
=
1 W
I
GD, TVJ = 125°C
10 W
0.1
1
10
100
1000
IG
10
100
mA
1000
mA
IG
Fig. 2 Gate controlled delay time tgd
Fig. 1 Gate trigger range
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
