ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted.)
These are stress ratings only and functional operation of the device
at these or any other above those indicated in the operation
sections of the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended periods of time
may affect reliability.
CAUTION:
ESD (ElectroStatic Discharge) sensitive
device. Permanent damage may occur on
unconnected devices subject to high energy
electrostatic fields. Unused devices must be
stored in conductive foam or shunts.
Personnel should be properly grounded prior
to handling this device. The protective foam
should be discharged to the destination
socket before devices are removed.
VDD to GND .................................................................. –0.3V, +17V
Digital Input Voltage to GND ................................. –0.3V, VDD+0.3V
VREF or VRFB to GND ................................................................ ±25V
Output Voltage (Pin 1, Pin 2) ................................ –0.3V, VDD+0.3V
Power Dissipation (Any Package to +75°C) ........................ 450mW
Derates above 75°C by ...................................................... 6mW/°C
Dice Junction Temperature ................................................. +150°C
Storage Temperature ............................................ –65°C to +150°C
Lead Temperature (Soldering, 60 seconds) ........................ +300°C
SPECIFICATIONS
(TA=25°C; VDD =+15V, VREF = +10V; IO1 = IO2 = GND = 0V; unipolar unless otherwise noted.)
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC PERFORMANCE
Resolution
12
Bits
Integral Non-Linearity
-AJ, -AA
-AK, -AB
Differential Non-Linearity
-AJ, -AA
Note 6
±1.0
±0.5
LSB
LSB
Note 5; 11-bit relative accuracy
Note 5; 12-bit relative accuracy
Note 7
Note 5; Monotonic to 12-bits
Note 5; Monotonic to 12-bits
Note 17
±1.0
±0.5
LSB
LSB
-AK, -AB
Gain Error
-AJ, -AA
±6
±8
±3
±5
±5
LSB
LSB
LSB
LSB
nA
Note 5
-AK, -AB
Note 5
Output Leakage Current
At IO1 (Pin 1); Note 18
Note 5
±10
nA
AC PERFORMANCE CHARACTERISTICS
Output Amplifier HOS-050;
Note 8
Propagation Delay
Current Settling Time
Output Capacitance
CIO1 (Pin 16)
100
0.6
ns
µs
Note 9
Full scale transition; Note 10
200
70
70
pF
pF
pF
Note 5; data inputs VIH
Note 5; data inputs VIH
Note 5; data inputs VIL
Note 5; data inputs VIL
Note 11
Measured at output IO1
Note 12
Measured at output IO1
Note 13
CIO2 (Pin 15)
CIO1 (Pin 16)
CIO2 (Pin 15)
200
pF
Glitch Energy
Multiplying Feedthrough Error
1,000
1.0
nVs
mVP-P
;
;
0.1
mVP-P
STABILITY
Gain Error TC
INL TC
DNL TC
±1.0
±0.1
±0.1
ppm/°C
ppm/°C
ppm/°C
%/%
Power Supply Rejection Ratio
±0.02
VDD = 14 to 16V
REFERENCE INPUT
Input Resistance
Input Resistance TC
Voltage Range
7
10
±150
15
KΩ
ppm/°C
Volts
Pin 19 to GND
Note 5 and 14
±25
HS7541A
12-Bit CMOS Multiplying DAC
© Copyright 2000 Sipex Corporation
2
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