U637256
C-Type
K-Type
DC Characteristics
Symbol
Conditions
Unit
Min. Max. Min. Max.
VCC
IOH
IOL
= 4.5 V
=-4 mA
= 8 mA
Output High Voltage
Output Low Voltage
VOH
VOL
2.4
8
2.4
8
V
V
0.4
-4
0.4
-4
VCC
VOH
VOL
= 4.5 V
= 2.4 V
= 0.4 V
Output High Current
Output Low Current
IOH
IOL
mA
mA
Input Leakage Current
VCC
= 5.5 V
High
Low
IIH
IIL
VIH
VIL
= 5.5 V
1
1
μA
μA
=
0 V
-1
-1
-1
-1
Output Leakage Current
VCC
= 5.5 V
High at Three-State- Output
Low at Three-State- Output
IOHZ
IOLZ
VOH
VOL
= 5.5 V
1
1
μA
μA
=
0 V
SRAM Memory Operations
Symbol
Switching Characteristics
No.
Min.
Max.
Unit
Read Cycle
Alt.
IEC
1
2
3
4
5
6
7
8
9
Read Cycle Timef
tAVAV
tAVQV
tELQV
tGLQV
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time to Data Validg
Chip Enable Access Time to Data Valid
Output Enable Access Time to Data Valid
E HIGH to Output in High-Zh
70
70
35
25
25
tEHQZ
tGHQZ
tELQX
G HIGH to Output in High-Zh
E LOW to Output in Low-Z
5
0
3
0
G LOW to Output in Low-Z
tGLQX
Output Hold Time after Address Change
tAXQX
10 Chip Enable to Power Activee
tELICCH
tEHICCL
11 Chip Disable to Power Standbyd, e
tPD
70
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both Low.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± ±200 mV from steady state output voltage.
Rev 1.1
August 15, 2006
STK Control #ML0054
4