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STK14C88-3WF45 参数 Datasheet PDF下载

STK14C88-3WF45图片预览
型号: STK14C88-3WF45
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8自动存储的nvSRAM [32Kx8 AutoStore nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 17 页 / 495 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
 浏览型号STK14C88-3WF45的Datasheet PDF文件第1页浏览型号STK14C88-3WF45的Datasheet PDF文件第2页浏览型号STK14C88-3WF45的Datasheet PDF文件第4页浏览型号STK14C88-3WF45的Datasheet PDF文件第5页浏览型号STK14C88-3WF45的Datasheet PDF文件第6页浏览型号STK14C88-3WF45的Datasheet PDF文件第7页浏览型号STK14C88-3WF45的Datasheet PDF文件第8页浏览型号STK14C88-3WF45的Datasheet PDF文件第9页  
STK14C88-3  
a
Note a: Stresses greater than those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device. This is a  
stress rating only, and functional operation of the device at con-  
ditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rat-  
ing conditions for extended periods may affect reliability.  
ABSOLUTE MAXIMUM RATINGS  
Voltage on Input Relative to Ground . . . . . . . . . . . . . –0.5V to 7.0V  
Voltage on Input Relative to VSS. . . . . . . . . . –0.6V to (V + 0.5V)  
Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . –0.5V to (V + 0.5V)  
Temperature under Bias. . . . . . . . . . . . . . . . . . . . . 55°C to 125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA  
CC  
CC  
e
DC CHARACTERISTICS  
(V = 3 - 3.6V)  
CC  
COMMERCIAL  
INDUSTRIAL  
SYMBOL  
PARAMETER  
Average V Current  
UNITS  
NOTES  
MIN  
MAX  
MIN  
MAX  
b
I
50  
42  
52  
44  
mA  
mA  
t
t
= 35ns  
= 45ns  
CC  
1
CC  
AVAV  
AVAV  
c
I
I
Average V Current during STORE  
3
9
3
9
mA  
mA  
All Inputs Don’t Care, V = max  
CC  
CC  
CC  
2
3
b
Average V Current at t  
CC  
= 200ns  
W (V – 0.2V)  
CC  
AVAV  
CC  
5V, 25°C, Typical  
All Others Cycling, CMOS Levels  
c
I
I
I
I
I
Average V  
Cycle  
Current during AutoStore  
CAP  
All Inputs Don’t Care  
CC  
4
2
2
mA  
d
d
Average V Current  
CC  
(Standby, Cycling TTL Input Levels)  
18  
16  
19  
17  
mA  
mA  
t
t
= 35ns, E V  
= 45ns, E V  
SB  
1
SB  
2
AVAV  
AVAV  
IH  
IH  
V
Standby Current  
E (V – 0.2V)  
CC  
CC  
1
1
1
1
1
1
mA  
μA  
μA  
(Standby, Stable CMOS Input Levels)  
All Others V 0.2V or (V – 0.2V)  
IN CC  
Input Leakage Current  
V = max  
CC  
ILK  
V
= V to V  
CC  
IN  
SS  
Off-State Output Leakage Current  
V = max  
CC  
OLK  
V
= V to V , E or G V  
IH  
IN  
SS  
CC  
V
V
V
V
V
T
Input Logic “1” Voltage  
Input Logic “0” Voltage  
Output Logic “1” Voltage  
Output Logic “0” Voltage  
Logic “0” Voltage on HSB Output  
Operating Temperature  
Operating Voltage  
2.2  
V
+ .5  
2.2  
– .5  
V + .5  
CC  
V
V
All Inputs  
All Inputs  
IH  
CC  
V
– .5  
0.8  
V
0.8  
IL  
SS  
SS  
2.4  
2.4  
V
I
I
I
=– 4mA except HSB  
= 8mA except HSB  
= 3mA  
OH  
OL  
BL  
OUT  
OUT  
OUT  
0.4  
0.4  
70  
0.4  
0.4  
85  
V
V
0
-40  
3.0  
54  
°C  
V
A
V
3.0  
54  
3.6  
264  
3.6  
264  
3.3V ± 0.3V  
CC  
V
Storage Capacitor  
μF  
K
68 to 220μF ± 20%, 4.7v Rated  
CAP  
NV  
Nonvolatile STORE operations  
Data Retention  
1,000  
100  
1,000  
100  
C
DATA  
Years  
@55 °C  
R
Note b: ICC and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.  
Note c:  
21and ICC are the average currents required for the duration of the respective STORE cycles (tSTORE ).  
CC  
Note d: E VIH will 4not produce standby current levels until any nonvolatile cycle in progress has timed out.  
Note e: VCC reference levels throughout this datasheet refer to VCCX if that is where the power supply connection is made, or VCAP if VCCX is connected  
to ground.  
Rev 0.6  
Document Control #ML0015  
February 2007  
3