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STK14C88-3RF35I 参数 Datasheet PDF下载

STK14C88-3RF35I图片预览
型号: STK14C88-3RF35I
PDF下载: 下载PDF文件 查看货源
内容描述: [Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDSO48, 0.300 INCH, PLASTIC, SSOP-48]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 13 页 / 242 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK14C88-3  
ABSOLUTE MAXIMUM RATINGSa  
Note a: Stresses greater than those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device. This is a  
stress rating only, and functional operation of the device at con-  
ditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rat-  
ing conditions for extended periods may affect reliability.  
Voltage on Input Relative to Ground . . . . . . . . . . . . . –0.5V to 4.5V  
Voltage on Input Relative to VSS . . . . . . . . . .0.6V to (V + 0.5V)  
Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . .0.5V to (V + 0.5V)  
CC  
Temperature under Bias. . . . . . . . . . . . . . . . . . . . . .–55°C to 125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .–65°C to 150°C  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA  
CC  
DC CHARACTERISTICS  
(VCC = 3.0V-3.6V)e  
COMMERCIAL  
INDUSTRIAL  
SYMBOL  
PARAMETER  
UNITS  
NOTES  
MIN  
MAX  
MIN  
MAX  
b
I
Average V Current  
50  
42  
37  
52  
44  
39  
mA  
mA  
mA  
t
t
t
= 35ns  
= 45ns  
= 55ns  
CC  
CC  
AVAV  
AVAV  
AVAV  
1
c
I
I
Average V Current during STORE  
3
3
mA  
All Inputs Don’t Care, V = max  
CC  
CC  
CC  
CC  
2
b
Average V Current at t  
CC  
= 200ns  
W (V – 0.2V)  
AVAV  
CC  
3
9
9
mA  
5V, 25°C, Typical  
All Others Cycling, CMOS Levels  
c
I
I
Average V  
Current during  
CAP  
All Inputs Don’t Care  
CC  
4
2
2
mA  
AutoStore™ Cycle  
d
Average V Current  
(Standby, Cycling TTL Input Levels)  
18  
16  
15  
19  
17  
16  
mA  
mA  
mA  
t
t
t
= 35ns, E V  
= 45ns, E V  
= 55ns, E V  
SB  
CC  
AVAV  
AVAV  
AVAV  
IH  
IH  
IH  
1
d
I
I
I
V
Standby Current  
E (V – 0.2V)  
CC  
SB  
CC  
2
1
1
mA  
µA  
µA  
(Standby, Stable CMOS Input Levels)  
All Others V 0.2V or (V – 0.2V)  
IN CC  
Input Leakage Current  
V
V
= max  
CC  
ILK  
±1  
±1  
±1  
±1  
= V to V  
CC  
IN  
SS  
Off-State Output Leakage Current  
V
V
= max  
CC  
OLK  
= V to V , E or G V  
IH  
IN  
SS  
CC  
V
V
V
V
V
Input Logic “1” Voltage  
2.2  
V
+ .5  
2.2  
V + .5  
CC  
V
V
All Inputs  
All Inputs  
IH  
CC  
Input Logic “0” Voltage  
V
– .5  
0.8  
V – .5  
SS  
0.8  
IL  
SS  
Output Logic “1” Voltage  
Output Logic “0” Voltage  
Logic “0” Voltage on HSB Output  
Operating Temperature  
2.4  
2.4  
V
I
I
I
=–4mA except HSB  
= 8mA except HSB  
= 3mA  
OH  
OL  
BL  
OUT  
OUT  
OUT  
0.4  
0.4  
70  
0.4  
0.4  
85  
V
V
T
0
40  
°C  
A
Note b: ICC and ICC are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.  
Note c: ICC1 and ICC3 are the average currents required for the duration of the respective STORE cycles (tSTORE ).  
4
Note d: E 2VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out.  
Note e: VCC reference levels throughout this datasheet refer to VCCX  
.
AC TEST CONDITIONS  
3.3V  
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 3V  
Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤ 5ns  
Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V  
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1  
317 Ohms  
OUTPUT  
CAPACITANCEf  
(TA = 25°C, f = 1.0MHz)  
351 Ohms  
30 pF  
INCLUDING  
SCOPE AND  
FIXTURE  
SYMBOL  
PARAMETER  
MAX  
UNITS  
CONDITIONS  
V = 0 to 3V  
V = 0 to 3V  
C
C
Input Capacitance  
Output Capacitance  
5
7
pF  
IN  
pF  
OUT  
Note f: These parameters are guaranteed but not tested.  
Figure 1: AC Output Loading  
November 2003  
2
Document Control # ML0015 rev 0.3