SSF9435
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-1.7A
-1.2
-1.9
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-5.3A,V
GS
=-10V
V
DD
=-15V, ID=-1A,
V
GS
=-10V,R
GEN
=6Ω
19
9
74
36
22.5
2
6
26
13
105
50
29
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
1040
420
150
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-5.3A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=-15V,I
D
=-4.5A
4
-1
46
70
7
-3
53
85
V
mΩ
S
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
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