SSF4703DC
Schottky
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
80
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-3.4A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, I
D
=-1.5A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
SCHOTTKY PARAMETERS
Forward Voltage Drop
Maximum reverse leakage current
Junction Capacitance
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
V
F
Irm
C
T
trr
Qrr
I
F
=0.5A
V
R
=16V
V
R
=10V
I
F
=1A, dI/dt=100A/μs
I
F
=1A, dI/dt=100A/μs
V
SD
I
S
V
GS
=0V,I
S
=-1A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-3.4A,V
GS
=-4.5V
V
DD
=-10V,I
D
=-3.4A
V
GS
=-4.5V,R
GEN
=3Ω
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
g
FS
V
DS
=-5V,I
D
=-3.4A
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-16V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
Min
-20
Typ
Max
Unit
V
-1
±100
μA
nA
-0.45
-0.7
73
99
133
-1
90
120
160
V
mΩ
4
7
S
540
70
50
PF
PF
PF
10
12
44
22
6.1
0.6
1.6
nS
nS
nS
nS
nC
nC
nC
-0.83
-1
-2
V
A
0.39
0.5
0.1
V
mA
pF
34
5.2
0.8
10
ns
nC
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
