SSF4703DC
DESCRIPTION
The SSF4703DC uses advanced trench technology
to provide excellent R
DS(ON)
and low gate charge .
A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
●
MOSFET
V
DS
= -20V,I
D
= -3.4A
R
DS(ON)
< 160mΩ @ V
GS
=-1.8V
R
DS(ON)
< 120mΩ @ V
GS
=-2.5V
R
DS(ON)
< 90mΩ @ V
GS
=-4.5V
●
SCHOTTKY
V
R
= 20V, I
F
= 1A, V
F
<0.5V @ 0.5A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Pin Assignment
Application
●DC-DC
conversion applications
●Load
switch
●Power
management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
4703DC
Device
SSF4703DC
Device Package
DFN3X2-8L
Reel Size
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Schottky
Unit
V
V
A
A
V
DS
V
GS
I
D
I
DM
V
R
I
F
I
FM
-20
±8
-3.4
-15
20
1.9
7
1.7
-55 To 150
0.96
-55 To 150
V
A
A
W
℃
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
75
℃
/W
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
