SSF3018D
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
15
31
54
40
48
3040
420
90
—
—
—
—
—
—
—
—
pF
nS
V
GS
=10V
V
DS
=0.5V
DSS
I
D
=10A
R
G
=15Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
t
on
Notes:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, ID = 37A, VDD = 50V
Continuous Source Current.
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-on Time
.
Min.
—
—
—
－
Typ.
—
—
—
100
Max.
80
A
320
1.3
—
V
nS
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=30A,V
GS
=0V
③
I
F
=25A, V
R
=50V, V
GS
=0V,
-di/dt=100A/μs
③
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
③
Pulse width≤300μS; duty cycle≤1.5% RG = 25Ω
Starting TJ = 25°C
EAS test circuits:
BV
dss
Gate charge test circuit:
©
Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
page
2of5
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
