SSF3018D
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF3018D is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 11.6mohm.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25ْ C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
Junction-to-case
Min.
—
Typ.
0.65
Max.
—
Units
ْ
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
80
70
320
192
2.0
±20
460
TBD
–55 to +150
ْ
C
W
W/ْ C
V
mJ
A
SSF3018D TOP View (TO220)
Max.
Units
ID=80A
BV=100V
Rdson=14mohm
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
2009.7.15
Min.
100
—
2.0
33
—
—
—
—
—
—
Typ.
—
11.6
55
—
—
—
—
60
21
Max. Units
—
14
4.0
—
1
5
200
-200
—
—
Version: 1.0
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=30A
V
DS
=V
GS
,I
D
=250μA
V
DS
=10V,I
D
=40A
V
DS
=100V,V
GS
=0V
V
DS
=100V,
V
GS
=0V,T
J
=150ْC
V
GS
=20V
V
GS
=-20V
I
D
=25A
V
DS
=0.5V
DSS
page
1of5
V
mΩ
V
S
μA
I
GSS
Q
g
Q
gs
nA
nC
©
Silikron Semiconductor CO. LTD.
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
