SiM3C1xx
3.2. Thermal Conditions
Table 3.18. Thermal Conditions
Parameter
Symbol
Conditions
Min
—
Typ
35
40
25
30
30
Max
—
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Thermal Resistance*
LGA-92 Packages
TQFP-80 Packages
QFN-64 Packages
TQFP-64 Packages
QFN-40 Packages
JA
—
—
—
—
—
—
—
—
*Note: Thermal resistance assumes a multi-layer PCB with any exposed pad soldered to a PCB pad.
3.3. Absolute Maximum Ratings
Stresses above those listed under Table 3.19 may cause permanent damage to the device. This is a stress rating
only and functional operation of the devices at those or any other conditions above those indicated in the operation
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect
device reliability.
Table 3.19. Absolute Maximum Ratings
Parameter
Ambient Temperature Under Bias
Storage Temperature
Symbol
Conditions
Min
–55
–65
Max
125
150
4.2
Units
°C
T
BIAS
T
°C
STG
Voltage on VDD
V
V
V
V
V
V
V
V
V
–0.3
V
DD
SS
SS
SS
SS
SS
SS
SS
SS
Voltage on VREGIN
V
EXTVREG0 Not Used
EXTVREG0 Used
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
6.0
3.6
4.2
6.5
5.8
V
V
V
V
V
V
V
V
REGIN
Voltage on VIO
V
IO
Voltage on VIOHD
V
IOHD
Voltage on I/O pins, non Port Bank 3 I/
O
V
RESET, V > 3.3 V
IN
IO
V +2.5
RESET, V < 3.3 V
IO
IO
Port Bank 0, 1, and 2 I/O
Port Bank 4 I/O
V +0.3
IO
V
–0.3
V
+0.3
IOHD
SSHD
*Note: VSS and VSSHD provide separate return current paths for device supplies, but are not isolated. They must always be
connected to the same potential on board.
28
Preliminary Rev. 0.8
SILICON [ SILICON ]
