Si8410/20/21
Table 11. Thermal Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
IC Junction-to-Case Thermal Resistance
θ
Thermocouple
located at center of
package
—
100
—
°C/W
JC
IC Junction-to-Air Thermal Resistance
Device Power Dissipation*
θ
—
—
210
—
—
°C/W
mW
JA
P
250
D
*Note: The Si8420-C-IS is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 °C, CL = 15 pF, input a 150 Mbps 50% duty cycle
square wave.
100
78
75
2.75 V
5.5 V
50
3.6 V
25
0
0
50
100
150
200
Case Temperature (ºC)
Figure 2. Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
16
Preliminary Rev. 0.1
SILICON [ SILICON ]
