Si823x
Table 1. Electrical Characteristics1 (Continued)
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Shutdown Time from
Disable True
tSD
—
—
60
ns
Restart Time from
Disable False
tRESTART
tSTART
CMTI
—
—
30
—
5
60
7
ns
µs
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
Device Start-up Time
Common Mode
Transient Immunity
VIA, VIB, PWM = VDDI or 0 V
50
—
kV/µs
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
8
Rev. 0.3
SILICON [ SILICON ]
