Si823x
Table 4. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test
Condition
14 LD
NBSOIC-16
14 LD
WBSOIC-16
LGA w/ Unit
LGA
WBSOIC-16
5 kV
RMS
Pad
2.5 kV
RMS
2.5 kV
RMS
1.5 kV
RMS
8.0
8.0
0.014
DIN IEC
60112/VDE
0303 Part 1
4.01
4.01
0.014
3.5
3.5
0.014
1.75
1.75
0.014
mm
mm
mm
Nominal Air Gap
(Clearance)
1
Nominal External Tracking
(Creepage)
1
Minimum Internal Gap
(Internal Clearance)
Tracking Resistance
(Comparative Tracking
Index)
Resistance
(Input-Output)
2
Capacitance
(Input-Output)
2
Input Capacitance
3
L(1O1)
L(1O2)
CTI
>175
10
12
>175
10
12
1.4
4.0
>175
10
12
1.4
4.0
>175
10
12
1.4
4.0
V
pF
pF
R
IO
C
IO
C
I
f = 1 MHz
1.4
4.0
Notes:
1.
The values in this table correspond to the nominal creepage and clearance values as detailed in “10. Package Outline:
and “16. Package Outline: 14 LD LGA with Thermal Pad (5 x 5 mm)” . VDE certifies the clearance and creepage limits
as 4.7 mm minimum for the NB SOIC-16 and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose a
clearance and creepage minimum for component level certifications. CSA certifies the clearance and creepage limits
as 3.9 mm minimum for the NB SOIC 16 and 7.6 mm minimum for the WB SOIC-16 package.
2.
To determine resistance and capacitance, the Si823x is converted into a 2-terminal device. Pins 1–8 (1-7, 14 LD LGA)
are shorted together to form the first terminal and pins 9–16 (8-14, 14 LD LGA) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3.
Measured from input pin to ground.
Table 5. IEC 60664-1 (VDE 0884 Part 2) Ratings
Specification
Parameter
Test Conditions
WB
SOIC-16
IIIa
I-IV
I-IV
I-III
I-III
NB
SOIC-16
IIIa
I-IV
I-III
I-II
I-II
14 LD
LGA
IIIa
I-IV
I-III
I-II
I-II
14 LD
LGA
w/ Pad
IIIa
I-IV
I-III
I-II
I-I
Basic Isolation Group
Material Group
Rated Mains Voltages < 150 V
RMS
Installation Classification
Rated Mains Voltages < 300 V
RMS
Rated Mains Voltages < 400 V
RMS
Rated Mains Voltages < 600 V
RMS
Rev. 0.3
11
SILABS [ SILICON LABORATORIES ]
