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SI8235BB-C-IM 参数 Datasheet PDF下载

SI8235BB-C-IM图片预览
型号: SI8235BB-C-IM
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5与4.0的AMP ISODRIVERS (2.5与5 kVRMS的) [0.5 AND 4.0 AMP ISODRIVERS (2.5 AND 5 KVRMS)]
分类和应用: 驱动
文件页数/大小: 52 页 / 424 K
品牌: SILICON [ SILICON ]
 浏览型号SI8235BB-C-IM的Datasheet PDF文件第18页浏览型号SI8235BB-C-IM的Datasheet PDF文件第19页浏览型号SI8235BB-C-IM的Datasheet PDF文件第20页浏览型号SI8235BB-C-IM的Datasheet PDF文件第21页浏览型号SI8235BB-C-IM的Datasheet PDF文件第23页浏览型号SI8235BB-C-IM的Datasheet PDF文件第24页浏览型号SI8235BB-C-IM的Datasheet PDF文件第25页浏览型号SI8235BB-C-IM的Datasheet PDF文件第26页  
Si823x  
5.3. Power Supply Connections  
Isolation requirements mandate individual supplies for VDDI, VDDA, and VDDB. The decoupling caps for these  
supplies must be placed as close to the VDD and GND pins of the Si823x as possible. The optimum values for  
these capacitors depend on load current and the distance between the chip and the regulator that powers it. Low  
effective series resistance (ESR) capacitors, such as Tantalum, are recommended.  
5.4. Power Dissipation Considerations  
Proper system design must assure that the Si823x operates within safe thermal limits across the entire load range.  
The Si823x total power dissipation is the sum of the power dissipated by bias supply current, internal switching  
losses, and power delivered to the load. Equation 1 shows total Si823x power dissipation. In a non-overlapping  
system, such as a high-side/low-side driver, n = 1. For a dual driver with each driver having an independent load, n  
can have a maximum value of 2, corresponding to a 100% overlap between the two outputs.  
PD = V  
I
DDI DDI + 2V I  
DDO QOUT + CintVDDO2F+ 2nCLVDDO2F  
where:  
PD is the total Si823x device power dissipation (W)  
IDDI is the input-side maximum bias current (3 mA)  
IQOUT is the driver die maximum bias current (2.5 mA)  
Cint is the internal parasitic capacitance (75 pF for the 0.5 A driver and 370 pF for the 4.0 A driver)  
VDDI is the input-side VDD supply voltage (4.5 to 5.5 V)  
VDDO is the driver-side supply voltage (10 to 24 V)  
F is the switching frequency (Hz)  
n is the overlap constant (max value = 2)  
Equation 1.  
The maximum power dissipation allowable for the Si823x is a function of the package thermal resistance, ambient  
temperature, and maximum allowable junction temperature, as shown in Equation 2:  
T
jmax TA  
---------------------------  
PDmax  
where:  
ja  
PDmax = Maximum Si823x power dissipation (W)  
Tjmax = Si823x maximum junction temperature (145 °C)  
TA = Ambient temperature (°C)  
ja = Si823x junction-to-air thermal resistance (105 °C/W)  
F = Si823x switching frequency (Hz)  
Equation 2.  
Substituting values for PDMAX TjMAX, TA, and into Equation 2 results in a maximum allowable total power  
ja  
dissipation of 1.1 W. Maximum allowable load is found by substituting this limit and the appropriate datasheet  
values from Table 1 on page 6 into Equation 1 and simplifying. The result is Equation 3 (0.5 A driver) and  
Equation 4 (4.0 A driver), both of which assume VDDI = 5 V and VDDA = VDDB = 18 V.  
1.4 103  
11  
10  
--------------------------  
CL(MAX)  
=
7.5 10  
F
Equation 3.  
1.4 103  
--------------------------  
CL(MAX)  
=
3.7 10  
F
Equation 4.  
22  
Rev. 0.3  
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