Si4020
GENERAL DEVICE SPECIFICATIONS
All voltages are referenced to Vss, the potential on the ground reference pin VSS.
Absolute Maximum Ratings (non-operating)
Symbol
Vdd
Parameter
Min
-0.5
-0.5
-0.5
-25
Max
6.0
Units
V
Positive supply voltage
Vin
Voltage on any pin except open collector outputs
Voltage on open collector outputs
Input current into any pin except VDD and VSS
Electrostatic discharge with human body model
Storage temperature
Vdd+0.5
6.0
V
Voc
V
Iin
25
mA
V
ESD
Tst
1000
125
ºC
ºC
-55
Tld
Lead temperature (soldering, max 10 s)
260
Recommended Operating Range
Symbol
Vdd
Parameter
Min
2.2
Max
5.4
Units
V
Positive supply voltage
Voc
Voltage on open collector outputs (Max 6.0 V)
Ambient operating temperature
Vdd - 1
-40
Vdd + 1
85
V
Top
ºC
ELECTRICAL SPECIFICATION
(Min/max values are valid over the whole recommended operating range, typical conditions: Top = 27 C; Vdd = Voc = 2.7 V)
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DC Characteristics
Symbol
Parameter
Conditions/Notes
315 MHz band
Min
Typ
9
Max
Units
433 MHz band
10
12
13
11
12
14
15
0.3
1.5
Supply current
(TX mode, Pout = 0 dBm)
Idd_TX_0
mA
868 MHz band
915 MHz band
315 MHz band
433 MHz band
Supply current
(TX mode, Pout = Pmax
Idd_TX_PMAX
mA
)
868 MHz band
915 MHz band
Ipd
Iwt
Standby current in sleep mode
All blocks disabled (Note 1)
µA
µA
Wake-up timer current consumption
Low battery detector current
consumption
Ilb
0.5
µA
Ix
Vlba
Vlb
Vil
Idle current
Only crystal oscillator is on
Programmable in 0.1 V steps
1.5
75
mA
mV
V
Low battery detection accuracy
Low battery detector threshold
Digital input low level
Digital input high level
Digital input current
2.2
5.3
0.3*Vdd
V
Vih
Iil
0.7*Vdd
-1
V
Vil = 0 V
1
1
µA
µA
V
Iih
Digital input current
Vih = Vdd, Vdd = 5.4 V
Iol = 2 mA
-1
Vol
Voh
Digital output low level
Digital output high level
0.4
Ioh = -2 mA
Vdd-0.4
V
Note for table above is on page 7.
7
SILICON [ SILICON ]
