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SI1003 参数 Datasheet PDF下载

SI1003图片预览
型号: SI1003
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗, 64/32 KB , 10位ADC, MCU ,集成了240-960兆赫的EZRadioPRO收发器 [Ultra Low Power, 64/32 kB, 10-Bit ADC MCU with Integrated 240-960 MHz EZRadioPRO Transceiver]
分类和应用:
文件页数/大小: 376 页 / 2369 K
品牌: SILICON [ SILICON ]
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Si1000/1/2/3/4/5  
13.6. Minimizing Flash Read Current  
The Flash memory in the Si1000/1/2/3/4/5 devices is responsible for a substantial portion of the total digital  
supply current when the device is executing code. Below are suggestions to minimize Flash read current.  
1. Use Idle, Suspend, or Sleep Modes while waiting for an interrupt, rather than polling the interrupt flag.  
Idle Mode is particularly well-suited for use in implementing short pauses, since the wake-up time is no  
more than three system clock cycles. See the Power Management chapter for details on the various  
low-power operating modes.  
2. Si1000/1/2/3/4/5 devices have a one-shot timer that saves power when operating at system clock  
frequencies of 10 MHz or less. The one-shot timer generates a minimum-duration enable signal for the  
Flash sense amps on each clock cycle in which the Flash memory is accessed. This allows the Flash to  
remain in a low power state for the remainder of the long clock cycle.  
At clock frequencies above 10 MHz, the system clock cycle becomes short enough that the one-shot  
timer no longer provides a power benefit. Disabling the one-shot timer at higher frequencies reduces  
power consumption. The one-shot is enabled by default, and it can be disabled (bypassed) by setting  
the BYPASS bit (FLSCL.6) to logic 1. To re-enable the one-shot, clear the BYPASS bit to logic 0. See  
the note in SFR Definition 13.3. FLSCL: Flash Scale for more information on how to properly clear the  
BYPASS bit.  
3. Flash read current depends on the number of address lines that toggle between sequential Flash read  
operations. In most cases, the difference in power is relatively small (on the order of 5%).  
4. The Flash memory is organized in rows. Each row in the Si1000/1/2/3/4/5 Flash contains 128 bytes. A  
substantial current increase can be detected when the read address jumps from one row in the Flash  
memory to another. Consider a 3-cycle loop (e.g., SJMP $, or while(1);) which straddles a 128-byte  
Flash row boundary. The Flash address jumps from one row to another on two of every three clock  
cycles. This can result in a current increase of up 30% when compared to the same 3-cycle loop  
contained entirely within a single row.  
5. To minimize the power consumption of small loops, it is best to locate them within a single row, if  
possible. To check if a loop is contained within a Flash row, divide the starting address of the first  
instruction in the loop by 128. If the remainder (result of modulo operation) plus the length of the loop is  
less than 127, then the loop fits inside a single Flash row. Otherwise, the loop will be straddling two  
adjacent Flash rows. If a loop executes in 20 or more clock cycles, then the transitions from one row to  
another will occur on relatively few clock cycles, and any resulting increase in operating current will be  
negligible.  
Note: Future 16 and 8 kB derivatives in this product family will use a Flash memory that is organized in rows of 64  
bytes each. To maintain code compatibility across the entire family, it is best to locate small loops within a single  
64-byte segment.  
Rev. 1.0  
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