EFR32MG13 Mighty Gecko Multi-Protocol Wireless SoC Family Data Sheet
Electrical Specifications
4.1.13 Flash Memory Characteristics1
Table 4.44. Flash Memory Characteristics1
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Flash erase cycles before
failure
ECFLASH
10000
—
—
cycles
Flash data retention
RETFLASH
T ≤ 85 °C
10
10
20
—
—
—
—
30
years
years
µs
T ≤ 125 °C
Word (32-bit) programming
time
tW_PROG
Burst write, 128 words, average
time per word
26.3
Single word
62
20
68.9
29.5
80
40
µs
Page erase time2
Mass erase time3
Device erase time4 5
tPERASE
tMERASE
tDERASE
ms
20
30
40
ms
T ≤ 85 °C
—
—
—
56.2
56.2
—
70
75
ms
ms
mA
T ≤ 125 °C
Page Erase
Erase current6
Write current6
IERASE
IWRITE
VFLASH
2.0
—
—
—
3.5
3.6
mA
V
Supply voltage during flash
erase and write
1.62
Note:
1. Flash data retention information is published in the Quarterly Quality and Reliability Report.
2. From setting the ERASEPAGE bit in MSC_WRITECMD to 1 until the BUSY bit in MSC_STATUS is cleared to 0. Internal setup
and hold times for flash control signals are included.
3. Mass erase is issued by the CPU and erases all flash.
4. Device erase is issued over the AAP interface and erases all flash, SRAM, the Lock Bit (LB) page, and the User data page Lock
Word (ULW).
5. From setting the DEVICEERASE bit in AAP_CMD to 1 until the ERASEBUSY bit in AAP_STATUS is cleared to 0. Internal setup
and hold times for flash control signals are included.
6. Measured at 25 °C.
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