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S-8261AANMD-G2N-T2 参数 Datasheet PDF下载

S-8261AANMD-G2N-T2图片预览
型号: S-8261AANMD-G2N-T2
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC ,电池组 [BATTERY PROTECTION IC FOR SINGLE-CELL PACK]
分类和应用: 电池光电二极管
文件页数/大小: 36 页 / 706 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK  
S-8261 Series  
Rev.1.9_00  
„ Battery Protection IC Connection Example  
EB+  
R1  
VDD  
470 Ω  
Battery  
C1  
DP  
S-8261 Series  
0.1 µF  
VSS  
DO  
CO  
VM  
R2  
2 kΩ  
FET2  
FET1  
EB−  
Figure 11  
Table 14 Constant for External Components  
Symbol  
FET1  
Part  
Purpose  
Typ.  
Min.  
Max.  
Remarks  
N-channel  
Threshold voltage  
Overdischarge detection voltage*1  
Discharge control  
Gate to source withstanding voltage  
Charger voltage*2  
MOS FET  
N-channel  
MOS FET  
Threshold voltage  
Overdischarge detection voltage*1  
FET2  
R1  
Charge control  
Gate to source withstanding voltage  
Charger voltage*2  
Resistance should be as small as possible to avoid  
lowering of the overcharge detection accuracy caused  
by VDD pin current.*3  
ESD protection,  
Resistor  
470  
300  
0.022  
300  
1 k  
F 1.0  
4 k  
For power fluctuation  
Install a capacitor of 0.022  
µF or higher between VDD  
C1  
Capacitor For power fluctuation  
0.1  
µF  
µ
µF  
and VSS.*4  
Select as large a resistance as large as possible to  
prevent current when a charger is connected in  
reverse.*5  
Protection for reverse  
Resistor  
R2  
2 kΩ  
connection of a charger  
*1. If the threshold voltage of an FET is low, the FET may not cut the charging current.  
If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used,  
discharging may be stoped before overdischarge is detected.  
*2. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may  
be destroyed.  
*3. If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum  
rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a  
resistor of 300 or higher to R1 for ESD protection.  
*4. If a capacitor of less than 0.022 µF is connected to C1, DO may oscillate when load short-circuiting is  
detected.  
Be sure to connect a capacitor of 0.022 µF or higher to C1.  
*5. If R2 has a resistance higher than 4 k, the charging current may not be cut when a high-voltage charger  
is connected.  
24  
Seiko Instruments Inc.  
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