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S-8241ABPMC-GBPT2G 参数 Datasheet PDF下载

S-8241ABPMC-GBPT2G图片预览
型号: S-8241ABPMC-GBPT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC 1格包 [BATTERY PROTECTION IC FOR 1-CELL PACK]
分类和应用: 电池光电二极管
文件页数/大小: 38 页 / 655 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8241 Series  
Rev.7.6_00  
„ Battery Protection IC Connection Example  
EB  
+
R1 : 470  
Ω
VDD  
VSS  
Battery  
C1 :  
0.1  
S-8241 Series  
μ
F
DO  
CO  
VM  
R2 : 1 k  
Ω
FET1  
FET2  
EB  
Figure 12  
Table 15 Constants for External Components  
Symbol  
FET1  
Parts  
Nch  
Purpose  
Typ.  
min.  
max.  
Remarks  
0.4 V  
Threshold voltage  
overdischarge detection voltage. *1  
Withstand voltage between gate and  
Discharge control  
MOS_FET  
source  
0.4 V  
Charger voltage *2  
Threshold voltage   
Nch  
MOS_FET  
overdischarge detection voltage. *1  
Withstand voltage between gate and  
FET2  
Charge control  
source  
Relation R1  
Charger voltage *2  
Protection for ESD and  
power fluctuation  
Protection for power  
fluctuation  
R2 should be  
R1  
C1  
Resistor  
R2 value  
470  
Ω
300 Ω  
maintained.*3  
Install a capacitor of 0.01 μF or  
Capacitor  
0.1  
μ
F
0.01  
μ
F
1.0  
μ
F
higher between VDD and VSS. *4  
To suppress current flow caused by  
reverse connection of a charger, set the  
Protection for charger  
reverse connection  
R2  
Resistor  
1 kΩ  
300  
Ω
1.3 kΩ  
resistance within the range from 300  
Ω to  
*5  
1.3 kΩ.  
*1. If an FET with a threshold voltage of 0.4 V or lower is used, the FET may fail to cut the charging current.  
If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may stop  
before overdischarge is detected.  
*2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may break.  
*3. If R1 has a higher resistance than R2 and if a charger is connected reversely, current flows from the charger to the IC and the  
voltage between VDD and VSS may exceed the absolute maximum rating. Install a resistor of 300  
protection.  
Ω or higher as R1 for ESD  
If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption.  
*4. If a capacitor C1 is less than 0.01 F, DO may oscillate when load short-circuiting is detected, a charger is connected  
reversely, or overcurrent 1 or 2 is detected.  
A capacitor of 0.01 F or higher as C1 should be installed. In some types of batteries DO oscillation may not stop unless the  
C1 capacity is increased. Set the C1 capacity by evaluating the actual application.  
*5. If R2 is set to less than 300 , a current which is bigger than the power dissipation flows through the IC and the IC may break  
μ
μ
Ω
when a charger is connected reversely. If a resistor bigger than 1.3 k  
when a high-voltage charger is connected.  
Ω is installed as R2, the charging current may not be cut  
Caution 1. The above constants may be changed without notice.  
2. It has not been confirmed whether the operation is normal or not in circuits other than the above example  
of connection. In addition, the example of connection shown above and the constant do not guarantee  
proper operation. Perform thorough evaluation using the actual application to set the constant.  
26  
Seiko Instruments Inc.  
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