ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta=25°C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max. Unit
circuit
1
−VDET(S) −VDET(S) −VDET(S)
Detection voltage*1
−VDET
V
×0.98
−VDET
×0.03
×1.02
−VDET
×0.08
2.4
−VDET
×0.05
0.8
Hysteresis width
VHYS
ISS
Current consumption
S-80815 to 26
2
VDD=3.5 V
VDD=4.5 V
VDD=6.0 V
VDD=7.5 V
µA
S-80827 to 39
S-80840 to 56
S-80857 to 60
0.8
2.4
0.9
2.7
0.9
2.7
0.95
Operating voltage
Output current
VDD
IOUT
10.0
V
1
3
Output transistor,
VDD=1.2 V
0.59
1.36
4.98
mA
Nch, VDS=0.5 V S-80815 to 60
VDD=2.4 V
2.88
S-80827 to 60
Output transistor,
Nch, VDS=10.0 V, VDD=10.0 V
Leakage current
ILEAK
tPLH
100
60
nA
Response time
Detection voltage
temperature
1
µs
∆ − VDET
∆Ta • −VDET
ppm/
°C
Ta=−40 °C to +85 °C
100
350
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
∆Ta • −VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
15
SII [ SEIKO INSTRUMENTS INC ]
