ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta=25°C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
circuit
1
−VDET(S) −VDET(S) −VDET(S)
Detection voltage*1
Release voltage
−VDET
+VDET
V
×0.98
S-80808 0.802
S-80809 0.910
S-80810 1.017
S-80811 1.125
S-80812 1.232
S-80813 1.340
S-80814 1.448
S-80808 0.018
S-80809 0.028
S-80810 0.037
S-80811 0.047
S-80812 0.056
S-80813 0.066
S-80814 0.076
×1.02
0.867
0.979
1.091
1.203
1.315
1.427
1.538
0.051
0.061
0.071
0.081
0.091
0.101
0.110
3.5
0.834
0.944
1.054
1.164
1.273
1.383
1.493
0.034
0.044
0.054
0.064
0.073
0.083
0.093
1.3
Hysteresis width
VHYS
Current consumption
ISS
S-80808 to 09
S-80810 to 14
2
V
V
DD=1.5 V
DD=2.0 V
µA
1.3
3.5
Operating voltage
Output current
VDD
IOUT
0.65
5.0
V
1
3
Output transistor,
0.04
0.2
mA
Nch, VDS=0.5 V, VDD=0.7 V
Output transistor,
Leakage current
Response time
ILEAK
tPLH
60
60
nA
Nch, VDS=5.0 V, VDD=5.0 V
1
µs
Detection voltage
temperature
∆ − VDET
∆Ta • −VDET
Ta=−40 °C to +85 °C
100
350 ppm/°C
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
∆Ta • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
14
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
