SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.4.3_00
2-2. Detection Voltage Typ.1.5 V or More Products
Table 17
(Ta = 25 °C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max. Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
Detection voltage*1
−VDET
V
V
1
×0.98
−VDET
×0.03
×1.02
−VDET
×0.08
2.4
−VDET
×0.05
0.8
Hysteresis width
VHYS
ISS
1
Current consumption
S-80815 to 26
2
2
2
2
1
V
V
V
V
DD = 3.5 V
DD = 4.5 V
DD = 6.0 V
DD = 7.5 V
µA
µA
µA
µA
V
S-80827 to 39
S-80840 to 56
S-80857 to 60
0.8
2.4
0.9
2.7
0.9
2.7
0.95
Operating voltage
Output current
VDD
IOUT
10.0
Output transistor,
V
DD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
DD = 2.4 V
S-80827 to 60
0.59
2.88
1.43
1.68
1.36
4.98
2.39
2.78
mA
mA
mA
mA
3
3
4
4
V
Output transistor,
V
DD = 4.8 V
Pch, VDS = 0.5 V S-80815 to 39
DD = 6.0 V
S-80840 to 56
DD = 8.4 V
S-80857 to 60
V
V
2.08
3.42
mA
4
1
Response time
Detection voltage
temperature
tPLH
60
µs
∆ − VDET
∆Ta • −VDET
ppm/
°C
Ta = −40 to +85 °C
100
350
1
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
∆Ta • −VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
19
SII [ SEIKO INSTRUMENTS INC ]
