SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.4.3_00
Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta = 25 °C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
Detection voltage*1
Release voltage
−VDET
+VDET
V
1
×0.98
0.802
0.910
1.017
1.125
1.232
1.340
1.448
0.018
0.028
0.037
0.047
0.056
0.066
0.076
×1.02
0.867
0.979
1.091
1.203
1.315
1.427
1.538
0.051
0.061
0.071
0.081
0.091
0.101
0.110
3.5
V
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
0.834
0.944
1.054
1.164
1.273
1.383
1.493
0.034
0.044
0.054
0.064
0.073
0.083
0.093
1.3
V
V
V
V
V
V
Hysteresis width
VHYS
V
V
V
V
V
V
Current consumption
ISS
S-80808 to 09
S-80810 to 14
VDD = 1.5 V
DD = 2.0 V
µA
µA
V
1.3
3.5
5.0
V
0.65
Operating voltage
Output current
VDD
IOUT
Output transistor,
0.04
0.2
mA
3
Nch, VDS = 0.5 V, VDD = 0.7 V
Output transistor,
Leakage current
Response time
ILEAK
tPLH
60
60
nA
3
1
Nch, VDS = 5.0 V, VDD = 5.0 V
µs
Detection voltage
temperature
∆ − VDET
∆Ta • −VDET
ppm/
°C
Ta = −40 to +85 °C
100
350
1
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
∆Ta • −VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
16
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
