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S-24CS08AFJ-TB-1G 参数 Datasheet PDF下载

S-24CS08AFJ-TB-1G图片预览
型号: S-24CS08AFJ-TB-1G
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2线串行E2PROM [2-WIRE CMOS SERIAL E2PROM]
分类和应用: 内存集成电路光电二极管ISM频段可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 47 页 / 682 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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2-WIRE CMOS SERIAL E2PROM  
S-24CS01A/02A/04A/08A  
Rev.4.4_00  
8. Address Increment Timing  
The timing for the automatic address increment is the falling edge of the SCL clock for the 8th bit of the  
read data in read operation and the falling edge of the SCL clock for the 8th bit of the received data in write  
operation.  
SCL  
8
9
1
8
9
D7 Output  
D0 Output  
SDA  
R / W=1  
ACK Output  
Address Increment  
Figure 19 Address Increment Timing in Reading  
SCL  
SDA  
8
9
1
8
9
R / W=0  
ACK Output  
D7 Input  
D0 Input  
ACK Output  
Address Increment  
Figure 20 Address Increment Timing in Writing  
„ Write Inhibition Function at Low Power Voltage  
The S-24CS01A/02A/04A/08A have a detection circuit for low power voltage. The detection circuit cancels  
a write instruction when the power voltage is low or the power switch is on. The detection voltage is 1.75 V  
typically and the release voltage is 2.05 V typically, the hysteresis of approximate 0.3 V thus exists. (See  
Figure 21.)  
When a low power voltage is detected, a write instruction is canceled at the reception of a stop condition.  
When the power voltage lowers during a data transmission or a write operation, the data at the address of  
the operation is not assured.  
Hysteresis width  
0.3 V approximately  
Power supply voltage  
Release voltage (+VDET  
)
2.05 V typ.  
Detection voltage (-VDET  
)
1.75 V typ.  
Write Instruction  
cancel  
Figure 21 Operation at low power voltage  
19  
Seiko Instruments Inc.  
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