PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
AC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
Input and Output externally matched to 50Ω, unless otherwise noted.
Symbol
Note
Parameter
Min. Typ.
Max. Unit
f
3
Frequency Range
2400
2500
MHz
L-U
1
1
Output Power @ PIN =+2 dBm, VCTL = 3.3V
Output Power @ PIN =+2 dBm, VCTL =0.4V
20
22.5
-20
23.5
0
dBm
dBm
P
out
Output Power variation over temperature (-40°C <TA
<+85°C)
∆P
3
3
1
2
dB
temp
dP
/dVCTL
Control Voltage Sensitivity
120
dBm/V
%
OUT
Power Added Efficiency at +22.5 dBm Output Power
Gain Variation over band (2400-2500 MHz)
45
0.7
-40
20
PAE
G
3
1.0
-35
dB
VAR
3.4
2
Harmonics
dBc
dB
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V
15
32
2
Reverse Isolation
42
dB
All non-harmonically related
outputs less than -50 dBc
2
Stability (PIN = +2dBm, Load VSWR = 6:1)
STAB
Notes: (1) Guaranteed by production test at TA =25°C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
Typical Performance Characteristics
Test Conditions: SiGe PA2423L-EV: VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f
= 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted.
Pout, Icc vs Supply Voltage
Output Power, Gain vs Input Power
24
23
22
21
20
19
18
17
16
15
14
150
142
134
126
118
110
102
94
25
20
15
10
5
30.00
25.00
20.00
15.00
10.00
5.00
86
78
70
2.4
2.6
3
3.4
3.6
0
2.8 Vcc(V)3.2
-28 -24 -20 -16 -12
-8
-4
0
4
8
Pout
Gain
Input Power (dBm)
Pout
Icc
DOC# 05PDS002 ꢁRev 4 ꢁ
07/26/2001
Page 4 of 11
SIGE [ SIGE SEMICONDUCTOR, INC. ]
