PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetooth
tm
Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetooth
tm
2.4 GHz radio applications. It
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
tm
class 1 Bluetooth applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetooth
tm
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Features
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
(1.6mm x 3.0mm)
Ordering Information
Type
PA2423L
Package
6 - LPCC
Shipping
Method
Tape and reel
Tubes -samples
PA2423L-EV
Evaluation kit
Functional Block Diagram
V
CTL
V
CC0
V
RAMP
Bias Generator
Ramp
Circuitry
IN
Stage 1
Interstage
Match
Stage 2
OUT/ V
CC2
GND
V
CC1
GND
DOC# 05PDS002
Rev 4
07/26/2001
Page 1 of 11
SIGE [ SIGE SEMICONDUCTOR, INC. ]
