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TK4P55D 参数 Datasheet PDF下载

TK4P55D图片预览
型号: TK4P55D
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型(I ?? - 莫萨? | ) [Silicon N Channel MOS Type (π-MOSⅦ)]
分类和应用:
文件页数/大小: 5 页 / 311 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号TK4P55D的Datasheet PDF文件第1页浏览型号TK4P55D的Datasheet PDF文件第2页浏览型号TK4P55D的Datasheet PDF文件第3页浏览型号TK4P55D的Datasheet PDF文件第5页  
R
DS (ON)
– Tc
5
100
COMMON SOURCE
VGS
=
10 V
PULSE TEST
COMMON SOURCE
Tc
=
25°C
PULSE TEST
I
DR
– V
DS
DRAIN-SOURCE ON-RESISTANCE
R
DS (ON)
(
Ω)
4
DRAIN REVERSE CURRENT
I
DR
(A)
10
3
2
2
4
ID
=
1 A
1
1
10
5
0.1
0
3
-0.6
1
VGS
=
0 V
-0.9
-1.2
-1.5
0
−80
−40
0
40
80
120
160
-0.3
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
C – V
DS
10000
5
V
th
– Tc
GATE THRESHOLD VOLTAGE
V
th
(V)
(pF)
1000
4
Ciss
C
3
CAPACITANCE
100
Coss
2
COMMON SOURCE
1 VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
10
Crss
1
0.1
100
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
100
500
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
20
DRAIN POWER DISSIPATION
P
D
(W)
80
400
VDS
200
VDD
=
100 V
16
DRAIN-SOURCE VOLTAGE
60
300
400
12
40
200
VGS
100
COMMON SOURCE
ID
=
4 A
Tc
=
25°C
PULSE TEST
8
20
4
0
0
40
80
120
160
0
0
4
8
12
16
0
20
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4/5
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