Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
4 A
Duty
≤
1%, t
w
=
10
μs
V
DD
≈
200 V
⎯
⎯
⎯
⎯
55
11
6
5
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
50
Ω
10 V
V
GS
0V
I
D
=
2 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
550 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
2 A
V
DS
=
10 V, I
D
=
2 A
Min
⎯
⎯
550
2.4
⎯
0.5
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
1.5
2.0
490
3
55
18
40
8
Max
±1
10
⎯
4.4
1.88
⎯
⎯
⎯
pF
Unit
µA
µA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
100
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
4 A, V
GS
=
0 V
I
DR
=
4 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/µs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
900
5
Max
4
16
−1.7
⎯
⎯
Unit
A
A
V
ns
µC
Marking (note 4)
TK4P55D
Part No. (or abbreviation code)
Lot No.*
Note 4:
*
Weekly code: (Four digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last 2digits of the calendar year)
2/5
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