SUD50P04-08
P-Channel 40-V (D-S) MOSFET
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited
by
R
DS(on)
*
100
100
µA
I
D
- Drain Current (A)
I
DAV
(A)
T
J
= 150 °C
10
T
J
= 25 °C
10
1 ms
10 ms, 100 ms
1 s, 10 s, DC
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
Limited
1
10
-5
10
-4
10
-3
10
-2
10
-1
0.01
0.1
1
10
100
Time (s)
Single Pulse Avalanche Current Capability vs. Time
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
5/8
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