SUD50P04-08 参数 Datasheet PDF下载

SUD50P04-08

P-Channel 40-V (D-S) MOSFET

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Dynamic

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

c

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Turn-On Delay

Rise Time

c

Turn-Off Delay Time

c

Fall Time

c

Time

c

c

Symbol

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

DS

= 0 V, I

D

= - 250 µA

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= - 40 V, V

GS

= 0 V

V

DS

= - 40 V, V

GS

= 0 V, T

J

= 125 °C

V

DS

= - 40 V, V

GS

= 0 V, T

J

= 150 °C

V

DS

≤

- 10 V, V

GS

= - 10 V

V

GS

= - 10 V, I

D

= - 22 A

V

GS

= - 4.5 V, I

D

= - 19 A

V

DS

= - 15 V, I

D

= - 22 A

Min.

- 40

-1

Typ.

Max.

Unit

- 2.5

± 250

-1

- 50

- 250

V

nA

µA

A

- 50

0.0067

0.0097

45

0.0081

0.0117

Ω

S

5380

V

GS

= 0 V, V

DS

= - 20 V, f = 1 MHz

V

DS

= - 20 V, V

GS

= - 10 V, I

D

= - 20 A

V

DS

= - 20 V, V

GS

= - 4.5 V, I

D

= - 20 A

f = 1 MHz

V

DD

= - 20 V, R

L

= 2

Ω

I

D

≅

- 10 A, V

GEN

= - 10 V, R

g

= 1

Ω

0.4

570

500

106

60

22

27

1.8

15

12

70

18

3.6

23

18

105

27

ns

Ω

159

90

nC

pF

Drain-Source Body Diode Ratings and Characteristics

T

C

= 25 °C

b

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

I

F

= - 10 A, dI/dt = 100 A/µs

I

F

= - 10 A, V

GS

= 0 V

- 0.8

35

-2

33

- 50

- 100

- 1.5

53

-3

50

A

V

ns

A

nC

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

2/8

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