SUD50N04-07
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless noted
2.0
V
GS
= 10 V
I
D
= 20 A
1.7
r
DS(on)
- On-Resistance
(Normalized)
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
10
100
1.4
1.1
0.8
0.5
- 50
1
- 25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
80
70
60
I
D
- Drain Current (A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
50
I
D
- Drain Current (A)
10
1 ms
10 ms
100 ms
dc
T
C
= 25 °C
Single Pulse
200
100
Limited by r
DS(on)
10 µs
100 µs
Limited By Package
1
T
C
- Case Temperature (°C)
V
DS
- Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
1K
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
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