SUD50N04-07 参数 Datasheet PDF下载

SUD50N04-07

N-Channel

40 V (D-S) 175 °C MOSFET

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Symbol

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

Test Conditions

V

GS

= 0 V, I

D

= 250 µA

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= 32 V, V

GS

= 0 V

V

DS

= 32 V, V

GS

= 0 V, T

J

= 125 °C

V

DS

= 32 V, V

GS

= 0 V, T

J

= 175 °C

V

DS

= 5 V, V

GS

= 10 V

V

GS

= 10 V, I

D

= 20 A

V

GS

= 10 V, I

D

= 20 A, T

J

= 125 °C

V

GS

= 10 V, I

D

= 20 A, T

J

= 175 °C

V

GS

= 4.5 V, I

D

= 10 A

Min

40

1

Typ

Max

Unit

3

± 100

1

50

150

V

nA

µA

A

65

0.006

0.0074

0.012

0.015

0.0085

20

57

2800

0.011

Drain-Source On-State Resistance

a

r

DS(on)

Ω

Forward Transconductance

Dynamic

b

Input Capacitance

Output Capacitance

a

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

V

DS

= 15 V, I

D

= 15 A

S

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

320

190

50

75

pF

Reverse Transfer Capacitance

Total Gate

Charge

c

Charge

c

c

Gate-Source

V

DS

= 20 V, V

GS

= 10 V, I

D

= 50 A

10

10

2.0

11

20

30

60

25

43

100

nC

Ω

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise

Time

c

Turn-Off DelayTime

Fall Time

c

Continous Current

Pulsed Current

Forward Voltage

a

c

t

d(on)

t

r

t

d(off)

t

f

b

c

V

DD

= 20 V, R

L

= 0.4

Ω

I

D

≅

50 A, V

GEN

= 10 V, R

g

= 2.5

Ω

20

40

15

ns

Source-Drain Diode Ratings and Characteristics (T

C

= 25 °C)

I

S

I

SM

V

SD

t

rr

A

V

ns

I

F

= 30 A, V

GS

= 0 V

I

F

= 30 A, di/dt = 100 A/µs

0.90

30

1.50

45

Reverse Recovery Time

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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