SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.030
T
= −55_C
C
50
40
30
20
10
0
0.025
25_C
V
GS
= 4.5 V
0.020
0.015
0.010
0.005
0.000
125_C
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
2000
1600
1200
800
400
0
10
8
V
D
= 10 V
DS
I
= 50 A
C
iss
6
4
C
oss
2
C
rss
0
0
4
8
12
16
20
0
4
8
12
Q − Total Gate Charge (nC)
g
16
20
V
− Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 30 A
T = 150_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
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