SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
22
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 20 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 20 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.008
0.0095
0.014
0.017
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
0.0135
GS
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1300
470
275
4.0
10.5
4.2
4.0
8
iss
V
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
GS
oss
C
rss
R
1.6
6
g
g
c
Total Gate Charge
Q
16
c
Gate-Source Charge
Q
Q
V
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
12
15
40
20
d(on)
c
Rise Time
t
10
r
V
= 10 V, R = 0.2 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
25
d(off)
c
Fall Time
t
12
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
V
GS
= 10 thru 6 V
T
= −55_C
C
5 V
4 V
80
60
40
20
0
25_C
125_C
3 V
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
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