SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
T
J
= 150
_
C
T
J
= 25
_
C
10
100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
50
1000
Limited
by r
DS(on)
100
I
D
– Drain Current (A)
10
ms
100
ms
10
1 ms
10 ms
100 ms
dc
Safe Operating Area
40
I
D
– Drain Current (A)
30
20
10
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Ambient Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
4/4
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