SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 32 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 32 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A, T
J
= 125_C
Drain-Source On-State Resistance
a
V
GS
= 10 V, I
D
= 40 A, T
J
= 175_C
r
DS(on)
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 40 A
20
40
0.0075
0.012
0.015
0.011
0.018
0.022
40
0.010
0.016
0.020
0.014
0.022
0.028
S
W
40
1
3
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 0.5
W
I
D
]
40 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 20 V, V
GS
= 10 V, I
D
= 40 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1700
370
145
35
6
8
14
7.5
30
14
30
15
60
30
ns
nC
pF
Source-Drain Ciode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
s
I
SM
V
SD
t
rr
I
F
= 40 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
1.0
30
40
A
100
1.50
60
V
ns
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2/4
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