SUD40N03-18P
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 40 A
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
I S – Source Current (A)
T
J
= 175_C
100
Source-Drain Diode Forward Voltage
1.2
T
J
= 25_C
10
0.8
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
50
500
10, 100
ms
Limited
by r
DS(on)
Safe Operating Area
40
I D – Drain Current (A)
I D – Drain Current (A)
100
30
10
1 ms
10 ms
100 ms
1s
dc
20
1
T
C
= 25_C
Single Pulse
10
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
30
4/4
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